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| RES100N03 Transistors Switching (30V, 10A) RES100N03 Features 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. External dimensions (Units : mm) Max.1.75 + 5.0- 0.2 (5) (4) (8) Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ROHM : SOP8 (4) (1) (2) (3) (4) (1) (2) (3) Gate Protection Diode. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. Absolute maximum ratings (Ta = 25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP Is Isp PD Tch Tstg Limits 30 20 10 40 10 40 1.3 5.2 2 150 -55~+150 Unit V V A A A A A A W Total Power Dissipation (TC=25C) Channel Temperature Storage Temperature PW10s, Duty cycle1% C C + 0.2- 0.1 Structure Silicon N-channel MOS FET + 3.9- 0.15 + 6.0- 0.3 + 0.5- 0.1 (1) 0.15 + 1.5- 0.1 Each lead has same dimensions 1.27 + 0.4- 0.1 0.1 RES100N03 Transistors Thermal resistance (Ta = 25C) Parameter Channel to Ambient Symbol Rth (ch-A) Limits 62.5 Unit C / W Electrical characteristics (Ta = 25C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Pulsed Symbol IGSS V (BR)DSS IDSS VGS (th) RDS (on) l Yfs l Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min. - 30 - 1.0 - - - 10 - - - - - - - - - - Typ. - - - - 10 15 16 - 1600 900 280 17 50 75 55 28.5 4.9 5.8 Max. 10 - 1 2.5 13 20 21 - - - - - - - - 57.0 - - Unit A V A V Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V m ID=10A, VGS=4.5V ID=10A, VGS=4V S pF pF pF ns ns ns ns nC nC nC ID=10A, VDS=10V VDS=10V VGS=0V f=1MHz ID=5A, VDD 5V VGS=10V RL=3 RGS=10 VDD=15V VGS=10V ID=10A Body diode characteristics (Source-Drain Characteristics) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Pulsed Symbol VSD trr Qrr Min. - - - Typ. - 260 290 Max. 1.5 - - Unit V ns nC Test Conditions Is=5.2A, VGS=0V IDR=5.2A, VGS=0V di/dt=100A/s RES100N03 Transistors Electrical characteristic curves FORWARD TRANSFER ADMITTANCE : I YfS I (S) 10 REVERSE DREIN CURRENT : IDR(A) Ta=125C 75C 25C 1 -25C 10 Ta=-25C 25C 75C 125C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=0V Pulsed 100 VDS=10V Pulsed 1 VGS=10V Pulsed 0.1 Ta=125C 75C 25C -25C 0.01 1 0.1 0.1 0.01 0.0 0.5 1.0 1.5 0.01 0.01 0.1 1 10 0.001 0.1 1 DRAIN CURRENT : ID(A) 10 SOURCE - DRAIN VOLTAGE : VGS(V) DRAIN CURRENT : I D(A) Fig.1 Reverse Drein Current vs. Source - Drain Voltage Fig.2 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current () 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=4V Pulsed 0.020 0.1 Ta=125C 75C 25C -25C 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 -50 -25 0 25 50 75 100 125 150 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=10V 0.018 ID=10A Pulsed 0.016 0.050 Ta=25C Pulsed 0.040 0.030 ID =10A 5A 0.020 0.01 0.010 0.001 0.1 1 DRAIN CURRENT : ID(A) 10 0.000 0 2 4 6 8 10 12 14 16 18 20 CHANNEL TEMPERATURE : Tch (C) GATE-SOURCE VOLTAGE : VGS(V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current () Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage GATE THRESHOLD VOLTAGE : VGS(th) (V) 4.0 DRAIN-SOURCE VOLTAGE : VDS (V) 3.0 CAPACITANCE : C (pF) 25 VGS 20 VDS 15 10 5 0 0 5 Ta=25C VDD=24V ID=7A Pulsed 0 40 48 10 Ciss 1000 Coss Crss 100 2.0 1.0 0.0 -50 -25 0 25 50 75 100 125 150 10 0.1 1 10 100 8 16 24 32 CHANNEL TEMPERATURE : Tch (C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.7 Gate Threshold Voltage vs. Channel Temperature Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VDS=10V ID=1mA Pulsed 10000 Ta=25C f=1MHz VGS=0V Pulsed 30 15 RES100N03 Transistors 1000 Ta=25C VDD=30V VGS=10V RG=10 Pulsed 20 18 DRAIN CURRENT : ID (A) SWITCHING TIME : t (ns) 16 14 12 10 8 6 4 2 VGS=6V VGS=4.5V VGS=4V VGS=3.5V Ta=25C Pulsed VGS=3V td (off) 100 tf tr td (on) 10 VGS=2.5V 1 0.1 1 DRAIN CURRENT : ID (A) 10 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D=Single Tc=25C th(ch-c) (t)=r(t) th(ch-c) th(ch-c)=6.25C / W PW T D=PW T 0.01 0.001 10 100 1m 10m 100m 1 10 100 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width |
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